Special offer - Delivery now £4.99 when ordered onlineSilicon grid calibration standards
EM-Tec M1 and M-10 calibration standards from Micro to Nano both have a square mesh grid pattern etched in the surface of an ultra-flat Si substrate. Grid patterns are practical tools for magnification calibration and image distortion assessments. They are intended for use for SEM, FESEM, FIB, Auger, SIMS and reflected light microscopy applications. Specimens can also be mounted directly on the pattern - in this case the pattern in the background will give a direct calibration within the image. This is especially useful when working with small specimens and powders. The Micro to Nano EM-Tec M1 and M-10 grid pattern calibration standards are supplied with a wafer level certificate of traceability to NIST.
There are two types of grid pattern calibration standards:
- EM-Tec M-1 with a 1µm pitch grid pattern for the 100x to 10,000x magnification range
- EM-Tec M-10 with a 10um pitch grid pattern for the 100x to 1000x magnification range
EM-Tec M-1
This standard has a grid pattern with a pitch of 1 µm and lines at 1, 10 and 100µm. It is useful for calibration and image distortion checks in the 100x to 10,000x magnification range. Alternatively, specimens can be placed directly on the grid pattern for immediate calibration or internal calibration in the image - particularly useful for small specimens. The lines are etched directly into the ultra-flat Si substrate which will give superior signal strength compared to SiO2 etched structures.
This standard is NIST traceable; example of wafer level certificate of traceability for the EM-Tec M-1 grid pattern calibration standard.
Intended for SEM, FESEM, FIB, Auger, SIMS and reflected light microscopy
please click here for specification
|
Substrate |
525µm thick boron doped ultra-flat wafer with <100> orientation |
|
Conductive |
Excellent - 5-10 Ohm resistivity |
|
Pattern size |
3 x 3mm |
|
Pitch/precision |
1µm ± 0.025µm, 10µm ± 0.025µm and 100µm ± 0.25µm |
|
Line type / depth |
Etched in Si, 300nm ± 30nm deep lines |
|
Line width |
200nm ± 10nm for 1µm pitch lines |
|
Perpendicularity |
Better than 0.01° |
|
Markers |
Edge fiducial markers for grid position finding |
|
Die size |
4 x 4mm |
|
Application |
SEM, FESEM, FIB, Auger, SIMS and reflected light microscopy |
|
Identification |
Product ID with serial number etched |
|
Mounting |
Unmounted, mounting optionally available |
|
Supplied |
Supplied in a Gel-Pak box |
|
Certification |
Wafer level certificate of traceability to NIST |
|
Qty
|
|
 EM-Tec M-1 calibration standard with 1µm grid pattern, mounted on standard 12.7mm pin stub (each) |
|
Qty
|
|
|
EM-Tec M-1 calibration standard with 1µm grid pattern, mounted on custom stub (each) |
|
Qty
|
|
|
EM-Tec M-1 calibration standard with 1µm grid pattern, mounted on Zeiss 12.7mm pin stub (each) |
|
Qty
|
|
|
EM-Tec M-1 calibration standard with 1µm grid pattern, mounted on 12.2mm JEOL stub (each) |
|
Qty
|
|
|
EM-Tec M-1 calibration standard with 1µm grid pattern, mounted on 15mm Hitachi stub (each) |
|
Qty
|
|
|
EM-Tec M-1 calibration standard with 1µm grid pattern, unmounted (each) |
EM-Tec M-10
This standard has a grid pattern with a pitch of 10 µm and lines at 10 and 100µm. Useful for calibration and image distortion check in the 100x to 1000x magnification range. Samples can also be placed directly on the grid pattern for direct calibration or internal calibration in the image. This is practical for small samples. The lines are etched directly into the ultra flat Si substrate which will give superior signal compared to SiO2 etched structures.
This standard is NIST traceable; example of wafer level certificate of traceability for the EM-Tec M-10 grid pattern calibration standard.
Intended for SEM, table top SEM, FIB, Auger, SIMS and reflected light microscopy.
please click here for specification
|
Substrate |
525µm thick boron doped ultra-flat wafer with <100> orientation |
|
Conductive |
Excellent; 5-10 Ohm resistivity |
|
Pattern size |
3 x 3mm |
|
Pitch/precision |
10µm ± 0.025µm and 100µm ± 0.25µm |
|
Line type / depth |
Etched in Si, 300nm ± 30nm deep lines |
|
Line width |
300nm ± 15nm for 10µm pitch lines\ 400nm ± 20nm for 100 µm pitch lines |
|
Perpendicularity |
Better than 0.01° |
|
Markers |
Edge fiducial markers for grid position finding |
|
Die size |
4 x 4mm |
|
Application |
SEM, FESEM, FIB, Auger, SIMS and reflected light microscopy |
|
Identification |
Product ID with serial number etched |
|
Mounting |
Unmounted, mounting optionally available |
|
Supplied |
Supplied in a Gel-Pak box |
|
Certification |
Wafer level certificate of traceability to NIST |
|
Qty
|
|
 EM-Tec M-10 calibration standard with 10µm grid pattern, mounted on standard 12.7mm pin stub (each) |
|
Qty
|
|
|
EM-Tec M-10 calibration standard with 10µm grid pattern, mounted on custom stub (each) |
|
Qty
|
|
|
EM-Tec M-10 calibration standard with 10µm grid pattern, mounted on Zeiss 12.7mm pin stub (each) |
|
Qty
|
|
|
EM-Tec M-10 calibration standard with 10µm grid pattern, mounted on 12.2mm JEOL stub (each) |
|
Qty
|
|
|
EM-Tec M-10 calibration standard with 10µm grid pattern, mounted on 15mm Hitachi stub (each) |
|
Qty
|
|
|
EM-Tec M-10 calibration standard with 10µm grid pattern, unmounted (each) |