Special offer - Delivery now £4.99 when ordered onlineSilicon wafers, substrates and specimen supports
Polished silicon is an excellent substrate for imaging experiments, nanotechnology and micro-fabrication applications. For imaging applications, it is an ideal sample substrate for small particles due to the low background signal of the highly polished surface. For biological applications silicon resembles glass, which makes it a suitable support for growing and/or mounting cells.
The silicon wafers and chips are all P-type, doped with B to provide excellent conductivity for SEM, FIB and STM applications. It is available as wafers, diced wafers or as smaller chips (pieces). The silicon wafer and chips all have a <100> orientation. Cleaving of the wafers to the desired size with a <100> orientation wafers is straight forward and simple.
Two grades of silicon substrates are offered:
- Micro-Tec standard silicon wafers and silicon chips for standard applications and medium resolution imaging.
- Nano-Tec ultra-flat silicon wafers and ultra-flat silicon chips for demanding applications and high resolution imaging.
We also offer a range of wafer holders for using wafers in all brands of SEM. Our wafer carrier trays provide protection for wafers during storage.
For precise breaking of silicon wafers we also offer Wafer cleaving pliers.
Micro-Tec silicon wafer substrates from Micro to Nano are a useful flat substrate for SEM imaging of particles due to the low background and can also be used as sample substrates, micro-fabrication, substrate for thin film research or biological substrates. Micro-Tec Si wafers are packed in a wafer carrier tray for protection. The diced wafer supplied on wafer adhesive disc and packed between two plastic sheets for protection. The Si chips can be easily lift off the adhesive sheet.
Micro-Tec standard silicon wafer substrates are available as:
- Ø2”/51mm silicon wafers
- Ø4”/100mm silicon wafers
- Ø6”/150mm silicon wafers
- Diced Ø4”/100mm silicon wafer in 5x5mm chips (~270 pieces)
Click here for specifications of Micro-Tec silicon wafers and chips
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Parameter |
Ø2”/51mm wafer |
Ø4”/100mm wafer |
Ø6”/150mm wafer |
Diced Ø4”/100mm |
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Product # |
10-008120 |
10-008140 |
10-008160 |
10-008145 |
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Orientation |
<100> |
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Type |
P (Boron) with one primary flat |
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Resistance |
1-30 Ohm/cm |
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Coating |
None, native oxide only |
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Thickness |
275µm (+/- 20µm) |
525µm (+/- 20µm) |
675µm (+/- 20µm) |
525µm (+/- 20µm) |
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Diameter |
51mm |
100mm |
150mm |
100mm |
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Chip (die) size |
n.a. |
n.a. |
n.a. |
5x5mm |
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Chip quantity |
n.a. |
n.a. |
n.a. |
~270 |
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TTV |
≤ 20µm |
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Primary flat |
15.9 +/- 1.65mm |
32.5 +/- 2.5mm |
57.5 +/- 2.5mm |
32.5 +/- 2.5mm |
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Surface roughness |
<1.5nm, polished on one side |
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Qty
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 Micro-Tec silicon wafer Ø2inch/51mm, 275µm thickness (each) |
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Qty
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 Micro-Tec silicon wafer, Ø4 inch/100mm, 525µm thickness (each) |
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Qty
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 Micro-Tec diced Ø4inch/100mm silicon wafer, 5x5mm chips, 525µm thickness (each) |
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Qty
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 Micro-Tec silicon wafer, Ø6inch/150mm, 675µm thickness (each) |
Nano-Tec, ultra-flat P silicon wafers have higher specifications than Micro-Tec silicon wafers. They are preferred for demanding applications in micro-fabrication, as substrates for thin film research or biological substrates. The larger wafers with the <100> orientation can be easily cleaved to the desired size. Ultra-flat Nano-Tec Si wafers are clean-room packed in a wafer carrier tray for protection. The ultra-flat Si chips are precision diced with a dicing saw, cleaned and clean-room packed in a gel-box. They can be easily lift off the gel substrate with flat tipped tweezers.
The Nano-Tec ultra-flat silicon wafers are available as:
- Ø4”/100mm <P/100> ultra-flat silicon wafers
- Ø6”/150mm <P/100> ultra-flat silicon wafers
- Ultra-flat 5x5mm Si chips; 25 packaged in a gel box
- Ultra-flat 5x5mm Si chips with 200nm thermal SiO2; 25 packaged in a gel box
Click here for specifications of Nano-Tec ultra-flat silicon wafers and chips
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Parameter |
Ø4”/100mm wafer |
Ø6”/150mm wafer |
5 x 5mm chips |
5x5mm chips with thermal SiO2 |
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Product # |
10-008141 |
10-008161 |
10-008150 |
10-008155 |
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Orientation |
<100> |
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Type |
P (Boron) with one flats |
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Resistance |
1-10 Ohm/cm |
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Grade |
Prime / CZ Virgin |
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Coating |
None, native oxide only |
Thermal SiO2 |
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Thickness |
525µm (+/- 20µm) |
675µm (+/- 20µm) |
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Diameter |
100mm |
150mm |
150mm |
150mm |
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Chip size |
n.a. |
n.a |
5x5mm |
5x5mm |
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Chips quantity |
n.a. |
n.a. |
25 |
25 |
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TTV |
≤1.5µm |
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Bow |
≤30µm |
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Warp |
≤30µm |
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Primary flat |
32.5 +/- 2.5mm |
57.5 +/- 2.5mm |
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Surface roughness |
Typically 0.2- 0.3nm, polished one side |
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Qty
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Nano-Tec ultra-flat silicon wafer, Ø4inch/100mm, 525µm thickness (each) |
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Qty
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 Nano-Tec ultra-flat silicon chips, 5x5mm, 25 in gel pack, 675µm thickness (pkg/25) |
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Qty
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 Nano-Tec ultra-flat silicon with 200nm thermal SiO2 chips, 5x5mm, 25 each in gel pack, 675µm thickness (pkg/25) |
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Qty
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Nano-Tec ultra-flat silicon wafer, Ø6inch/150mm, 675µm thickness (each) |